Shear stress measurements on InAs nanowires by AFM manipulation.

Characterization of InAs nanowires strained by AFM manipulation

Tunable few electron quantum dots in InAs nanowires

Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using th...

Raman scattering study of InAs nanowires under high pressure.

The pressure-dependent phonon modes of InAs nanowires have been investigated by Raman spectroscopy under high pressure up to ∼58 GPa. X-ray diffraction measurements show that InAs nanowires at 21 GPa exhibit a phase transition from a wurtzite to an orthorhombic crystal structure, with a corresponding drastic change in the first-order Raman spectra. In the low-pressure regime, a linear increase ...

Electron transport in indium arsenide nanowires

The vapor–liquid–solid growth of semiconductor nanowires led to the implementation of engineered electronic and optoelectronic one-dimensional nanostructures with outstanding promise for device applications. To realize this promise, detailed understanding and control over their growth, crystal structure, and transport properties and their combined impact on device performance is vital. Here, we...

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires

The [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires have been studied by the 8 × 8 Luttinger-Kohn Hamiltonian to search for non-vanishing fundamental gaps between inverted electron and hole bands. We focus on the variations of the band-inverted fundamental gap, the hybridization gap, and the effective gap with the core radius and shell thickness of the nanowires. The evolutions of a...